I2T30 Technology

Features:

  • High Volt Device:
    - 35V floating PDMOS device
    - 27V non-floating NDMOS device
    - Low volt PMOS device, floating up to 25V
    - Diodes (high volt ESD, zener, poly)
    - low, medium, high ohmic resistors

    I2T30E:
    - 25V floating NDMOS device
    - 25V NPN bipolar
     
  • Low RDSon:
    - 35V floating PDMOS: RDSon of 0.3 Ω*mm2
    - 27V non-floating NDMOS: RDSon of 0.25Ω*mm2
    - 25V floating NDMOS: RDSon of 0.25Ω*mm2
  • Digital Core Library:
    - Double Layer Metal: 1750 Gates per mm2
    - Triple Layer Metal: 3500 Gates per mm2
    - Operating Voltage Range: 2.7 to 5.5V, up to
      155MHz switching speed
    - RAM, ROM Compilers
    - OTP zapping cells: 200Bit/mm2
  • IP Cores:
    - μController (e.g. 8051, 8308, 6502)
    - AD and DA Converter
    - Bus-Interface (LIN, CAN, SPI, I2C, SCI, K-Line)
  • Analog cells:
    - Bandgap
    - Comparators
    - Opamps
    - Oscillators
    - Low power linear voltage regulator
    - Low drop-out voltage regulator
    - High efficiency step up and step down converters
    - On-chip H-Bridge
    - Level shifter
    - On-chip charge pump
    - High impedance outputs under un-powered conditions
  • Option:
    - E2PROM: 4kBit/mm2, 220 ns read cycle
    - Capa implant for high density capacitors
    - Low VT for PMOS devices for low supply voltage

 

Technology:

The Intelligent Interface Technology (I2T30) is a high volt modular addition to the CMOS 0.7μ mixed
signal standard cell technology. I2T30 is an answer to the ever increasing demand for high volt, high
density mixed signal integration for industrial and automotive applications.
Main advantage of the modular approach is to capitalize on existing technology and library
developments and offers the best compromise between cost and flexibility.

Development:

The developments are realized completely inside HMT’s design center. Based on a close
relationship between the customer, the production plant and the development engineer, the
development covers all items of concept analysis, pre-study, project definition, design and
industrialization under the responsibility of HMT
microelectronic Ltd. For each product, a specific test
program and DUT-board is developed and
depending on request and application, an
appropriated qualification procedure is run.

Production:

The wafer production, wafer test, packaging, final
test, conditioning and delivery of such developed
ASIC’s is done under the full responsibility of HMT
microelectronic Ltd.

Packaging:

Various package are available: SO, SSOP, TSSOP,
PLCC, Flat-Pack, DIL, BGA, TBGA, MLP, FCOL,
Die-Form