I2T100 Technology

Features:

  • High Volt Device:
    - 100V DMOS floating device (n- and p-type)
    - 100V MOS device (n- and p-type)
    - 25V bipolar transistor (npn and pnp)
    - Diodes (high volt ESD, zener, poly, high volt
      floating, Schaffner protection)
    - 100V capacitors
    - 100V low, medium, high ohmic resistors
  • Low RDSon:
    - Floating NDMOS 100V: RDSon of 0.8 Ω*mm2
    - Floating NDMOS 60V: RDSon of 0.2 Ω*mm2
    - Floating NDMOS 40V: RDSon of 0.12 Ω*mm2
    - PDMOS 100V: RDSon of 6 Ω∗mm2
    - PDMOS 60V: RDSon of 0.7 Ω*mm2
    - PDMOS 40V: RDSon of 0.5 Ω*mm2
  •  Digital Core Library:
    - Double Layer Metal: 1750 Gates per mm2
    - Triple Layer Metal: 3500 Gates per mm2
    - Operating Voltage Range: 2.7 to 5.5V, 155MHz
    - RAM, ROM Compilers
    - OTP zapping cells: 200Bit/mm2
  • IP Cores:
    - μController (e.g. 8051, 8308, 6502)
    - AD and DA Converter
    - Bus-Interface (LIN, CAN, SPI, I2C, SCI, K-Line)
  • Analog cells:
    - Bandgap
    - Comparators
    - Opamps
    - Oscillators
    - Low power linear voltage regulator
    - Low drop-out voltage regulator
    - High efficiency step up and step down converters
    - On-chip H-Bridge
    - Level shifter
    - On-chip charge pump
    - High impedance outputs under un-powered
      conditions
    - ± 60V input protection
  • Option:
    - E2PROM: 4kBit/mm2, 220 ns read cycle
    - High current metal
    - Capa implant for high density capacitors
    - Low VT for PMOS devices for low supply voltage

 

Technology:

The Intelligent Interface Technology (I2T100) is a high volt modular addition to the CMOS 0.7μ
mixed signal standard cell technology. I2T100 is an answer to the ever increasing demand for high
volt, high density mixed signal integration for industrial and automotive applications.
Main advantage of the modular approach is to capitalize on existing technology and library
developments and offers the best compromise between cost and flexibility.

Development:

The developments are realized completely inside HMT’s design center. Based on a close
relationship between the customer, the production plant and the development engineer, the
development covers all items of concept analysis, prestudy,
project definition, design and industrialization under
the responsibility of HMT microelectronic Ltd. For each
product, a specific test program and DUT-board is
developed and depending on request and application, an
appropriated qualification procedure is run.

Production:

The wafer production, wafer test, packaging, final test,
conditioning and delivery of such developed ASIC’s is done
under the full responsibility of HMT microelectronic Ltd.

Packaging:

Various package are available: SO, SSOP, TSSOP, PLCC,
Flat-Pack, DIL, BGA, TBGA, MLP, FCOL, Die-Form