Hybrid Technology

Features:

  • Thick film technology
  • Multi-Layer (up to 16 layers per side)
  • Double side: Both side are available for
    conductor layer, SMD, Flip-Chip or COB
    components
  • Via’s: up to 800 via’s per substrate (4 inch)
  • Substrate:                  4 x 4 inch, standard
                                    6 x 4 inch
                                    2 x 2 inch
  • Printed resistors:        0.15Ω to 10MΩ
  • Resistor tolerance:     1% standard
                                    0.1% minimum
  • Resistor geometry:      .5 x .5 mm (trim able)
                                    .2 x .2 mm
  • Resistor types:            Linear
                                    Power
                                    NTC
                                    PTC
  • Resistor temperature  50ppm (typical)
    coefficient TK
  • Resistor trimming: active, passive
  • Conductors:         Silver-Palladium
                              Pure Silver
                              Gold
  • Conductor           200 μm (typical
    resolution:           100 μm (Gold)
                             <100 μm (etched)
  • Components:        Chip on Board (COB)
                              SMD down to 0402
                              Beam-Lead
  • Wire-Bonding:       Gold 25, 30 μm
                              (standard)
                               Aluminum 25, 33 μm
  • Ribbon-Bonding:    Gold up to 400 μm
                               Aluminum up to 400 μm
  • Outline all forms (laser-cut, punch tooling)
  • Connectors: SIL, DIL, Quad SMD and wire
  • Test: 100%

 

Technology:
Hybrid technology (Al2O3, known as alumina) special features are excellent reliability, high packing density, high stability and high thermal conductivity. Hybrid technology is highly recommended for Chip on Board (COB) technique in automotive, industrial and telecom applications due to a similar thermal expansion coefficient of silicon and alumina. A specialty of HMT microelectronic Ltd is to combine ASIC (analog, mixed-signal and digital),
μController and power components, mounted as COB or Flip-Chip, to form high-density smart power modules.

Development:

The development of modules and systems are realized completely inside HMT’s design center. Based on a close relationship between the customer, the production plant and the development engineer, the development covers all items of concept analysis, pre-study, project definition, design and industrialization under the responsibility of HMT microelectronic Ltd.

Production:

The production and test of such developed modules or systems is done inside HiDensity group under the full responsibility of HMT microelectronic Ltd. For each product a specific production and test procedure is developed and results of each production lot are included in the deliverables to the customer.